July 2002

BSIM3SOI version 3.0 model was released on May 2002 by UC Berkeley. This model includes both Partially and Fully depleted models. This model is now implemented in SmartSpice and can

HiSIM is based on a charge-sheet model. IDS current is described using only one equation, and there-fore is continuous over the whole range of operating regions. This improves MOSFETs modeling

HiSIM is a MOSFET model for SPICE circuit simulation that has been developed by Hiroshima University and STARC Company. This model present several advantage on the extraction point of view,

The input impedence of most network analyzers are around 1 MOhm, which is relatively small. Due to this low impedence the leakage current on the Base port (Typically Port1) becames