May 1, 2002

In this contribution we present a model for transient enhanced diffusion of boron in silicon. This model is based on the usual pair diffusion mechanism including non-equilibrium reactions between the

Interest continues to grow in the development of high electron mobility transistor (HEMT) technologies for micrometer and millimeter wave power applications. A primary concern of device designers working with such

This article presents a standard case of transmission line: the microstrip structure. First, the structure is described and then the results extracted from QUEST are compared with measurements. We thank

ATLAS allows the user to define a contact with a number of different boundary conditions; ohmic, Schottky, current controlled, floating or reflecting. The Schottky contact boundary condition realizes that at