Casey Molver

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster. 

22 years ago

In certain cases, most notably in modern bipolar and SiGe HBT structures, epitaxial steps are performed after the oxide isolation structures have been already created. Thus the initial surface prior

22 years ago

This article focuses on the use of Silvaco’s RFIC Design Suite including PDK, SmartSpice-RF, and Gateway.

22 years ago

HiSIM-1.2 parameter extraction methodology was discussed in detail in a previous issue of Silvaco Simulation Standard [1]. This article is meant to provide the precise UTMOST-III local optimization strategies to

22 years ago

1. Introduction BSIM1, the first model of the BSIM series was released about ten years ago. Some major improvements have been made since that time, making the BSIM3v3 and BSIM4

22 years ago

Customers are starting to use 64bit machines with large hard drives and Gigs of RAM and tend to forget the limitations imposed by a 32bit operating system. If you have

22 years ago

Expert’s Node Probing is powerful tool for inspection of netlist components on layout. It is designed for highlighting layout objects electrically connected with each others. The additional features of Node

22 years ago

Overview To extract parasitic capacitances from a circuit layout, you need to perform the following steps:

22 years ago

Expert layout editor version 4.0.1R has several new commands and functions released together with the new Qt GUI interface. Most of them are developed in order to improve easier operation.

22 years ago

Q. Every time I create a new project or library, an empty cell with the same name is created in my project. What do I need to setup to avoid

22 years ago

SILVACO has recently released a new suite of interconnect analysis tools to meet the demands of state of the art cell, circuit and chip design.

22 years ago

On the cutting edge of LSI design, the accuracy of Layout Parasitic Extraction (LPE) tools is a critical issue to miniaturized LSI design of rules measuring 0.13 um or lower.

22 years ago

When solving for the static CV curve for a MOS capacitor, due to the absence of current carriers, convergence can be a real problem. Previous methods suggested in the hints