12 years ago
There is a constant demand to lower the on-state resistance of devices, improving their energy efficiency as well as increasing their current handling capabilities whilst maintaining the desired breakdown voltage.
12 years ago
Victory Process supports mesh generation for device simulation using many common algorithms. The primary two are conformal and delaunay. A simple process simulation followed by an export will result in
12 years ago
This webinar will provide a comprehensive overview of model parameter extraction for high voltage devices, using the industry standard HiSIM_HV 2 model. HiSIM_HV 2 model parameter effects will be explained
12 years ago
This webinar will provide specific approaches for simulating electronic device behavioral changes, including oxide charging and physical damage, during their exposure to four of the most common radiation environments that
12 years ago
The photovoltaics (PV) market represents the fastest growing renewable energy technology, with a 35% annual growth rate, which is projected to be worth $150B by 2018.[1] The global cumulative installed
12 years ago
VWF allows a curve as target for optimization. This feature greatly benefits the users who need to calibrate TCAD simulation against measured curve such as SIMS. VWF offers multiple ways
12 years ago
This document is a short guide on the new and existing support for export cropping/slicing in Victory Process cell mode. The cropping operation is useful to extract a segment of
12 years ago
Background: Victory Process is packaged with a wide range of etch models. Victory Process also supports an “Open Modelling Interface” (OMI). The OMI enables users to develop their own models
12 years ago
Irradiation by energetic particles can degrade semiconductor device performance. The particles involved can be electrons, positrons, neutrons, protons, alpha particles, heavy ions, or high-energy photons. As they pass through a
12 years ago
A reversed biased PIN diode acts as a radiation event detector, sensing the occurrence of an ionizing radiation pulse, which is connected to a threshold detector, the resistor RThreshold, that
12 years ago
Two fundamental damage mechanisms take place when devices are exposed to particle fluences: ionization and lattice displacement or just displacement damage. Ionization has previously been addressed in other simulation standard
12 years ago
The Simulation Standard article “Simulating Radiation-Induced Shifts in MOSFET Threshold Voltage”1 gives a brief overview of the ways that ionizing radiation can affect semiconductor devices, and considers insulator charging in