Casey Molver

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster. 

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Yonghyun Shim, Member, IEEE, Jean-Pierre Raskin, Member, IEEE, César Roda Neve, Member, IEEE,

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Daewoong Kang, Hyungcheol Shin, “Improving the cell characteristics using arch-active profile in NAND

The full text for most of these papers may be found at the IEEE website at www.ieee.org. H. Matsuura, S. Sakurai, Y. Oda, S. Fukushima, S. Ishikawa, A. Takeshita, and

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Takashi Kameshima, Shun Ono, Togo Kudo, Kyosuke Ozaki, Yoichi Kirihara, Kazuo Kobayashi, Yuichi

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Viviana Cerantonio, Marcello Giuffrida, Cristina Miccoli, Alessandro Chini, Ferdinando Iucolano “From TCAD simulations

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Guido Notermans, Olivier Quittard, Anco Heringa, Željko Mrčarica, Fabrice Blanc, Hans van Zwol,

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Debin Li, “Recent Progress in Organic Device Simulation using Silvaco” Silvaco Japan, pp.7,

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Keh-Jeng Chang, Jyh-Jeng Chou, Hung-Chih Li, and Kuo-Cheng Chang, “Impact quantification of the

The full text most of these papers may be found at the IEEE website at www.ieee.org. Ali A. Orouji, Hamid Amini Moghadam, A. Dideban, “Double window partial SOI-LDMOSFET: A novel

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Yu-Shien Shiah1, Kihyung Sim1, Yuhao Shi1, Katsumi Abe2, Shigenori Ueda3, Masato Sasase1, Junghwan

The full text for most of these papers may be found at the IEEE website at www.ieee.org. N. Seoane1, M. Aldegunde1, K. Kalna1 and A. J. Garcia-Loureiro2 “MC/DD study of

The full text for most of these papers may be found at the IEEE website at www.ieee.org. T Uchino1, 2, E Gili1, 3, L Tan4, O Buiu4, S Hall4 and