Casey Molver

SOI MOSFETs can exhibit a kink in their Id/Vd curves, which is caused by impact ionization, floating potentials, and other effects. One way of suppressing this kink effect is to

Crosstalk is one of the main parameters that critically affect the resolution of detector arrays. It results in a reduction in image clarity, thus degrading system performance. There are two

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to

Texturing is often used to improve light trapping in thin film solar cells. The textured surfaces act to scatter the light in oblique angles lengthening the optical path and effectively

High Voltage Power Devices using super junction or multi RESURF effect have a relatively high BV with a drastic reduction in the on-state resistance (Ron)[1-2]. Several Techniques such as buried

Vertical LOCOS (VLOCOS) power MOSFET structures are becoming increasingly popular [1-3] for 100 V rated applications due to their high packing density, superior temperature characteristics and low on-state resistance. It

Solar cells are experiencing a surge in activity due to concerns about sustainability of non-renewable resources and the negative impacts of global warming due to human activity.

One of the most important features of TCAD simulation is that the TCAD tools encapsulate the physics of the processes or devices being studied. For the user, this can develop

The simulation of stress during device fabrication is becoming increasingly important and is often now deliberately introduced during fabrication to enhance device performance. The induced stress can take the form

VICTORY DEVICE simulation framework includes tools for 1D, 2D and 3D simulation of modern semiconductor technologies. VICTORY DEVICE implements a full tetrahedral meshing engine for fast and accurate simulation of

We show full 3-Dimensional (3D) electrical and optical simulation of a tunable silicon-based Photonic Crystal (PhC) Chromatic Dispersion Compensator (CDC) with high power efficiency and ultra-low power consumption (114nW), operating

Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) Non-Volatile memory structures can be simulated using ATLAS. The basic principle of these devices is the use of a charge trapping Silicon Nitride layer embedded in the oxide