Testimonials

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster. 

2 years ago

It is often the case that a design of experiments (DOE) is required to optimize the performance of a particular device. Sometimes this simply means tweaking the implant dose for

2 years ago

May 30, 2024

2 years ago

Recently a new diffusion model was introduced to Victory Process: the CMOS model. This model aims at taking on the challenges brought by the specificities of CMOS device processing such

3 years ago

Properly setting the wafer orientation in Victory Process (VP) is critical for various processes such as ion implantation, etching, and deposition. For ion implantation in particular, the determination of the

3 years ago

Photonic integrated circuits (PICs) are a key enabling technology for a broad range of current and next-generation products. Combining semiconductor materials and manufacturing processes common to microelectronics with the encoding,

3 years ago

2024/3/28 シルバコ・ソフトウェアを用いたTCADシミュレーションにより、活性領域に局在する欠陥の短絡現象への影響を調査しました。欠陥ドットが平坦なボディ/ドレイン界面、チャネル領域のSiC/酸化膜界面、湾曲したボディ/ドレイン界面に局在するさまざまなケースを検討し、位置に対する感度も調査しました。

3 years ago

This paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the