Casey Molver

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster. 

8 years ago

Introduction With the recently launched Radiant, a graphical user interface (GUI) for Atlas-based TCAD simulations, the entry barrier for inexperienced users has been lowered. In particular, the use of guided

8 years ago

Organic thin-film transistors (OTFTs) are promising devices for future low-cost electronics[1][2]. However, to enable the development of this technology, circuit design simulation is needed. TCAD with MixedMode approach provides a

8 years ago

Introduction In this article we will emphasize two new features of the DeckBuild deck editing environment. These are the movie creation on the one hand and the creation of PDF

8 years ago

by Thomas Blaesi

It was 1988 when I got into SPICE (Simulation Program with Integrated Circuit Emphasis) while I was characterizing a 1.5 μm Standard cell library developed by

8 years ago

本ウェビナでは、代表的なIoTシステム上でマイクロプロセッサ・コードを格納、実行するために利用可能な各種ソリューションについて考察します。

8 years ago

本ウェビナでは、ナノメータ・スケールにおけるバンド構造の変更方法および、デバイスのパフォーマンスの結果について、分かりやすく説明します。

本ウェビナでは、まず原理を説明し、それから機械的歪みがフレキシブル・エレクトロニクスの回路設計および物理検証に与える影響を考慮するために、TFTおよびMOSFET SPICEモデルを拡張、カスタマイズする実践的テクニックについて説明します。

8 years ago

本ウェビナでは、MIPI Allianceの新しい規格であるI3Cについて考察します。I3Cは、従来のI2C、SPIインタフェースを統合、拡張するもので、最新のモバイル、自動車、IoTアプリケーションに対応する強力な機能が追加されています。

8 years ago

As process nodes continue to shrink, the requirement for additional physics is gradually creeping into each stage of the design process. By way of illustration, TCAD simulations are becoming more

8 years ago

The previously standalone Stellar GUI based field solver tool for parasitic extraction is now integrated into Hipex (Silvaco’s full chip extraction tool) in Expert GUI. In Hipex, user can choose

8 years ago

We have demonstrated in previous articles the static electrical and optical simulation of LC cells [1][2]. The last piece of the function for a comprehensive analysis of an LC pixel

8 years ago

OBJECTIVE Add an impurity (H) to a material (silicon) for a diffusion model (Fermi). The description below refers to Victory Process version 7.27.X.