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June 2026

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

Simulation Standard

4 months ago

TCAD Breakdown Simulation of a 1200 V Vertical GaN FinFET

This paper presents TCAD process, mesh, and device simulations of a 1200 V vertical gallium nitride (GaN) FinFET using Silvaco Victory tools

TCAD Webinars, ウェビナー

4 months ago

Accelerating Manufacturing-Aware Simulations for Photonic Integrated Circuits with FTCO™ and Digital Twins

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