Yearly Archives: 2014

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2014

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13 years ago

Simulations of Deep-Level Transient Spectroscopy for 4H-SiC

Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices. Recently, SBD (Schottky Barrier Diode) and MOSFET based on silicon carbide have been

13 years ago

Generally Applicable Degradation Model for Silicon MOS Devices

The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface. This leads to reduced saturation currents and

13 years ago

a-Si TFTにおけるリーク電流のTCADキャリブレーション

このウェビナーでは、アモルファスシリコン薄膜トランジスタ(a-Si TFT)において、TCADシミュレーションを測定データと比較する場合に用いるキャリブレーションの手順を詳細に取り上げます。

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13 years ago

SiCおよびSiパワー･デバイスのTCADからSPICEに至るシミュレーション

このウェビナーでは、パワー・デバイスの設計、シミュレーションおよび性能最適化をTCADとSPICEシミュレーションにより行う手法について取り上げます。

13 years ago

シングルイベント効果のモデリングと解析

このウェビナーでは、放射線効果を専門とするエンジニアがシングルイベント効果(SEE)とそれらがデバイスや回路に及ぼす影響のモデリングを行う場合に使用する手法を取り上げます。

13 years ago

Hints, Tips, and Solutions – Simulation on a Cluster of Computers Using the Distributed Computing Feature

A new feature that is introduced in Silvaco’s TCAD applications allows the user to run a parallel simulation on a cluster of computers within a network.

13 years ago

Hints, Tips and Solutions – Illuminate a 3D device in a Victory Device Opto-electronic Simulation

A: The 2 basic commands needed to illuminate a structure in Victory Device are BEAM and SOLVE. A single (or multiple) BEAM statement(s) are specified containing the light source properties.

13 years ago

Atlas Simulation of GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

Wide-bandgap semiconductors such as SiC and GaN have attracted much attention because they are expected to break through the material limits of silicon. In particular, AlGaN/GaN HEMTs are generally promising

13 years ago

Modeling the Optical Response of Phonon-dressed Excitons in OLED Simulations

We demonstrate the modeling of optical response of exciton-polarons based on the well established Holstein Hamiltonian to model coupled exciton-phonon systems in organic molecular chains. Our approach uses Green’s functions