In this article the various enhancements to the organic device modeling that have been implemented recently in Atlas are presented. Following the description of the carrier statistics and the new

Fabrication of various nano-structures often requires mask controlled or patterned etching of materials. The chemical or wet etch methods cannot be used for nanoscale geometries due to the substantial isotropic

Silicon has long been the semiconductor of choice for high-voltage power electronics applications [1,2]. However, wide-bandgap semiconductors such as SiC have begun to attract attention because they are projected to