When a wafer is clamped only at its edges and is heated with an infra-red source in a vacuum, the majority of the heat loss occurs through black body radiation.

Single-crystal gallium oxide (Ga2O3) has attracted increasing attention as a promising material for power device applications. It possesses excellent material properties and has the potential for mass productivity of low-cost

A methodology for simulating an edge emitting laser is demonstrated that incorporates a distributed Bragg Reflector (DBR) as one of the mirrors, with the other being a variable air gap

A new class of high-voltage semiconductor devices, known as a reverse conducting IGBT (RC-IGBT), has emerged in recent years from research efforts to diminish the usage of external anti-parallel free-wheeling

In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to as the direction (see Figure 1). With regard

Interdigitated back contact silicon heterojunction (IBC-SHJ) combines the advantages of interdigitated back contact (IBC) and silicon heterojunction (SHJ) solar cells. Having all the contacts at the back of the cell

Silicon has long been the semiconductor of choice for high-voltage power electronics applications. However, wide-bandgap semiconductors such as SiC and GaN have begun to attract attention because they are projected

Monte Carlo module of Athena allows accurate simulation of ion implantation in 4H-SiC and 6H-SiC [1]. It is known that channeling effects are very pronounced in SiC since its lattice

We demonstrate the capabilities of SILVACO TCAD tools for the design and simulation of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors. We compute the photoconductive gain spectrum of the device

In this article the various enhancements to the organic device modeling that have been implemented recently in Atlas are presented. Following the description of the carrier statistics and the new