April 1, 2012

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15 years ago

Current Collapse Phenomenon in GaN HFETs resulting from Intentional Bulk Iron (Fe) Doping and Un-intentional Interface Traps

The Gallium Nitride-based material family has fundamental material properties which make it an attractive candidate for semiconductor device fabrication. These properties include: High saturation velocities and breakdown field strength Direct

15 years ago

Syntax Driven 2D Structure Export from 3D Structures and Extraction of 2D Volume Data Maps

This article demonstrates a new feature of TonyPlot3D. This feature enables the automated, syntax driven export of 2D structure slices from 3D structures. Also demonstrated in this article is the

15 years ago

Leakage Current Calibration Procedures of Amorphous Silicon Thin-Film Transistors

Amorphous silicon Thin-Film Transistors (a-Si TFTs) are widely used as the switching device of liquid crystal display (LCD) technology. For development and analysis of a-Si TFTs, many research groups are

15 years ago

3D TFT Simulation

Both flexible and touch panel displays have become popular for portable applications. To meet various functional requirements, system-on-panel (SOP) design has become essential [1] and different layouts as well as