Daily Archives: 2000年11月1日
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November 1, 2000
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
26 years ago
Simulating Impurity Freeze-Out During Low Temperature Operation
The low temperature operation of many device structures has been shown as an effective method for improving device performance without reducing device size. By modeling low temperature phenomena, numerical simulation
26 years ago
Simulation of Vertical Double-Gate SOI MOSFETs Using Device3D
This article will present the simulation methodology of a self-aligned double-gate MOSFET structure (FinFET) using SILVACO 3-D simulation suite. The double-gate MOSFET is one of the most attractive alternative to
26 years ago
Non-Stationary Transport Effects: Impact on Performances of Realistic 50nm MOSFET Technology
We analyze quantitatively the real impact of technology on the needed level for carrier transport modeling. The results, based on theoretical analyzes, are applied to existing devices. This work shows
26 years ago
ATLAS can be used to perform large signal sinusoidal analysis
The Atlas syntax is flexible enough to allow the definition of sinusoidal nodal voltages by defining them on the SOLVE statement line. To illustrate this the structure shown in Figure