Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Diffusion & Implantation
Victory Device
- 2D Simulator
This example demonstrates modelling of a combination PiN and Schottky Power Diode device based on the paper:
S.Musumeci et al., “Modeling and Characterization of a Merged PiN Schottky Diode with Doping Compensation of the Drift Region, ” Industry Application Conference, 2004. 39th IAS Annual Meeting. Publication date: 3-7 Oct.2004 Volume 2, pp. 1244-1251.
It shows:
-Structure definition using Victory Process
-Forward and Reverse I-V Characteristics using Victory Device
The device is first constructed in the process simulator, Victory Process, using three stages of epitaxial growth with masked boron implants prior to each stage. A long, high temperature anneal then diffuses these implanted regions together to create a deep p-doped region to help spread the electric field at high reverse bias.
Once constructed, the device forward and reverse characteristics are then simulated in Victory Device, using the “Universal Schottky Tunneling (UST) ” model and the results are plotted in Victory Visual.
Images
