Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Device:
- 2D Simulator
The Ic-Vce characteristics of an Insulated Gate Bipolar Transistor (IGBT) are simulated. This example shows:
-Creating the IGBT structure using Victory Device
-Ic-Vce test definition
-IGBT Ic versus Vce characteristics
The device simulation begins with the definition of the IGBT structure. Victory Device is used to define the IGBT structure including MESH, REGION, ELECTRODES, and DOPING statements. A fine rectangular mesh is first defined. Next the materials are assigned to specific regions using the REGION statements. The electrodes and doping profiles are then defined.
Additionally, specific characteristics of these materials, their electrodes and the charge carriers within can be modified. The MATERIAL statement is used to define the electron and hole recombination lifetimes in the semiconductor. The CONTACT statement defines the workfunction of the polysilicon electrode, in this case, that of degenerately doped n-type polysilicon. This completes the IGBT structure definition.
For any device simulation, the physical transport models must be enabled using the MODELS statement. In this case, they reflect the different physical effects important to the IGBT device. They are cvt: concentration and perpendicular-field dependent model of Lombardi, which also activates the fldmob: lateral electric field dependent mobility, srh: Shockley-Read-Hall recombination, and auger: recombination accounting for high level injection effects.
IGBT output characteristics are simulated by sweeping the collector contact voltage for several discrete values of gate voltage. In this example, the collector voltage will be swept from 0 to 20 V for gate voltages of 5 and 10 V. This is accomplished by first obtaining a solution at each gate bias of interest with all other electrodes set to 0V. Next, each gate solution is used as the initial solution for a collector sweep. Output log files are saved for each gate-collector sweep combination. Victory Visual displays the IGBT Ic-Vce family of curves by overlaying all output curves on one plot.
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