Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

• 2D Simulator

This example illustrates the well-known electrostatic advantages of fabricating MOS devices with physically thin semiconductor active regions. The electrostatic benefits arise from the removal of a large fraction of the reflected gate charge that would not normally be converted into useful conduction current because it is used to uncover ionized dopants in the depletion region. By removing most of the depletion region through the use of a thin film, a much larger fraction of the reflected gate charge can be used to create mobile carriers, resulting in an increase in the effective mobility.

The top gate portion of the channel, which would otherwise form a tri-gate device, is isolated with a p+ isolation region to remove any parasitic transistor effect with an unwanted alternate surface crystalographic direction.

For completeness, quantum effects on the electron distribution are also considered in this example, using the N.HANSCHQM parameter in the MODELS statement.

In the interest of simulation speed, the mesh density in all three dimensions, has been coarsened by a linear factor of 2, using the parameter SPACE.MULT=2 in the MESH statement, which is not considered ideal but still allows the example to run in a reasonable time. The parallelized iterative solver PAM.GMRES is also effective in reducing the simulation time in 3D, although it may require some adjustment of the solver parameters such as PC.FILL.RATIO and LINEAR.MAX.ITERATIONS in the METHOD statement.

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