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Required Modules
Victory Device
- 2D Simulator
- 2D Optical
We demonstrate how to calibrate APD related device parameters and compare the simulation results with experimental data. The target experimental data is extracted from reference digitized image. Victory Device simulates InAlGaAs Avalanche photodiode’s reverse biased dark current and photo-illuminated light current at 1.55 um wavelength. And then we compare the simulation IV current with reference data by calibrating material parameters listed in the reference paper.
Reference: “Physical modeling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher “, Omar S. Abdukwahid, et al. IET Optoelectronics, Special Issue: Selected Papers from Semiconductor and Integrated Optoelectronics (SIOE) 2017.
We employed cylindrical type mesh structure to mimic 3D nature of actual APD shape shown in Figure 2 of reference paper. The vertical epi structure is well described in the paper including thickness and doping. The doping value is not clearly seen in the paper and so we fitted the doping value of grading layer to the reference dark current curve. Most critical doping layers are multiplication and grading layer which is listed on the reference. Other bandgap parameters and carrier lifetime is slightly adjusted to fit the experimental IV data.
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