Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Implantation
Victory Mesh
- 2D Meshing
Victory Device
- 2D Simulator
When a mask layout file is used for process simulation, a 2D simulation deck in Victory Process differs from a 3D simulation deck only in that a 2D simulation domain (2D cut) must be defined within the mask using the FROM and TO parameters as well as the AT parameter of the INIT statement. In this example, a 2D cut is made at the position Y = 0.02 (AT=0.02) within the mask to create a 2D FDSOI NMOS structure. The cut line is parallel to the X-axis starting from the point X = 0 (FROM=0) , which coincides with the left side of the mask area, to the point X = 0.12 (TO=0.12) , which coincides with the right side of the mask area. As this X cut-line at the Y = 0.02 position within the mask results in a 2D simulation in XZ plane, the FLOW.DIM=2D_XZ parameter is also specified in the INIT statement to enforce the 2D symmetry mode right from the beginning of the simulation flow.
The resulting 2D FDSOI NMOSFET is meshed using Victory Process. In addition, the maximum level of obtuseness of a triangle in the device mesh is set to MAX.OBTUSENESS=1. The lower the value of MAX.OBTUSENESS, the more triangles of the resulting conformal device mesh are less obtuse.
The Id-Vd characteristics of the 2D 20nm FD-SOI MOSFET are simulated with various carrier transport models using Victory Device.
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