Home> >

SOI_ex02.in : Fully Depleted SOI – Vt and Subthreshold Slope

SOI_ex02.in : Fully Depleted SOI – Vt and Subthreshold Slope

SOI_ex02.in : Fully Depleted SOI – Vt and Subthreshold Slope

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

  • 2D Simulator

This example demonstrates:

Basic SOI structure definition using Victory Device syntax

Generating an Id/Vgs curve with Vds=0.1V

Extracting threshold voltage and subthreshold slope from the results

Plotting output curves and structures

Thin film, fully depleted SOI MOSFETs have been shown to achieve low threshold voltages and near ideal inverse subthreshold slopes. This makes them ideal for low power operation.

The mesh has been designed to support the thin SOI film thickness of 0.1um. The channel doping is low enough to ensure the film is fully depleted.

Images

SOI_ex02_02.png
SOI_ex02_03.png
SOI_ex02_01.png

Related Articles