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Adv_CMOS_ex11.in : Nanosheet (NSFET) Simulation

Adv_CMOS_ex11.in : Nanosheet (NSFET) Simulation

Adv_CMOS_ex11.in : Nanosheet (NSFET) Simulation

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 3D Diffusion & Implantation
  • 3D Stress

Victory Mesh

  • 3D Meshing

Victory Device

  • 3D Simulator

This example is for a Nanosheet (NSFET) simulation and includes complete simulation flow from process to device modeling. In the process part, various process modules are integrated into a single flow. In the device part, transfer characterization and parameters extraction are included.
Structure Creation:
Process simulation flow of a NSFET structure, various process modules are integrated into this flow.
Process parameter extraction
Mirroring structure at the end of Process simulation
Remeshing in Victory Mesh
Electrical Simulation:
Transfer characterization:
-IdVglin and IdVgsat Simulation
Parameter extraction: Vtgm/Vtlin/Idlin/Vtsat/Idsat/Idoff/SSsat/DIBL Extraction
Reference paper:
Mochizuki S, Loubet N, Mirdha P, et al. “Evaluation of (110) versus (001) channel orientation for improved nFET/pFET device performance trade-off in gate-all-around nanosheet technology. ” 2023 International Electron Devices Meeting (IEDM).

Images

Adv_CMOS_ex11_01.png
Adv_CMOS_ex11_02.png

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