Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

• 2D Diffusion & Implantation
• 2D Physical Etch & Deposit

From “Integrated Circuit Fabrication: Science and Technology by Plummer & Griffin, published by Cambridge University Press

The aspect ratio of the photoresist defining the trench features determines how
fast the etching proceeds.

Main parameters are PAR_FOCUS and PAR_RATIO
PAR_FOCUS determines the tightness of ion beam
Larger values of PAR_FOCUS show an increase in etching
in the center of the trench and less under-etch
PAR_RATIO is the ration of ions/neutrals
A value of 0.1 corresponds to nearly pure chemical (isotropic)
etching and a value of 30 to nearly pure sputter (highly focused
when F=60) etching.
As you can expect, the increase in R flux ( PAR_RATIO ) leads to
deeper etching in the middle of the trench with less under-etching.

Images