ASU_ex11.in : Velocity Overshoot in FD SOI Devices

ASU_ex11.in : Velocity Overshoot in FD SOI Devices

ASU_ex11.in : Velocity Overshoot in FD SOI Devices

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

  • 2D Simulator

Drift-diffusion models are inadequate for modeling SOI devices with channel lengths Lg<200 nm. Therefore, for Lg<200 nm there is a need for hydrodynamic/energy balance modeling of SOI devices. For very small devices, the choice of proper energy relaxation time is very important. To use energy-balance/hydrodynamic models, “taurel.el ” and “taumob.el ” must be set in the material statement. With the two different model, we can note a much higher velociy overshoot with HD models than DD models. In the models statement, ksn must be set to -1.

Images

ASU_ex11-01.png

Related Articles