ASU_ex10.in : Kink Effect in PF SOI Devices

ASU_ex10.in : Kink Effect in PF SOI Devices

ASU_ex10.in : Kink Effect in PF SOI Devices

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

  • 2D Simulator

Silicon on insulator (SOI) devices have many advantages over conventional MOSFET devices. SOI devices has lower parasitic capacitances, higher operating frequencies, higher performance at equivalent Vdd, higher flexibility in controlling the bulk potential, resistance to latch-up, and radiaiton hardening. However, SOI devices have a major problem with self-heating due to the poor thermal conductivity of the burried oxide. When modeling SOI devices, the kink effect in PD-SOI cause holes to recombine at the source without having to raise the body potential. This cuases lower eletric fields near the drain region.

Images

ASU_ex10-01.png

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