Requires: CLEVER

This example is identical to example clex06.in except that the etching models have been upgraded to a more physical 87 degree side-wall. The same EXNOR custom cell layout is used and illustrates how CLEVER may be used to analyse the effect of the etching model on a complex custom cell.

The extracted netlist may be used in a SmartSpice input deck to analyse the circuit performance which can then be compared to the previous example.

When this example is loaded support files, that may be run in SmartSPice to show the circuit behaviour, will also be loaded.

It should be noted that the high resolution geometries created by the realistic physical process models used in this example require a usable memory of approximately 300MB to run the parameter extraction programs due to the intricate mesh thus created. The simulation can be run on machines with less memory but the program may take a significantly longer time to run due memory swapping between the RAM and hard disk.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

Output Results

These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation
you should consider updating to a later version of the software.

Input Files

Input Deck

go victoryprocess

## Process Description ##

init Layout=clex07.lay Depth=1 material=silicon rulefile=clex07.lmp

# Gate Stack
Deposit material=Oxide Thickness=0.3 Max
Deposit material=Poly  Thickness=0.25 Max
Etch material=Polysilicon Thickness=0.3 angle=87 Mask=POLY max
Electrodes mask=*GATE material=poly

# Contacts
Deposit material=Oxide Thickness=0.5 Max
Etch material=Oxide Thickness=1.2 angle=87 Mask=CONT Reverse max
Electrodes mask=*CONT material=Silicon

# Metal 1
Deposit material=Aluminum Thickness=0.5 Max
Etch material=Aluminum Thickness=0.6 angle=87 Mask=METAL1 max
Electrodes mask=METAL1 material=Aluminum

# Via 1
Deposit material=Oxide Thickness=0.5 Max
Etch material=Oxide Thickness=0.6 Isotropic=87 Mask=VIA1 Reverse max

# Metal 2
Deposit material=Aluminum Thickness=0.5 Max
Etch material=Aluminum Thickness=0.6 angle=87 Mask=METAL2 max
Electrodes mask=METAL2 material=Aluminum

# Via 2
Deposit material=Oxide Thickness=1 Max

Save Name=clex07_0

## After creating the 3D structure   ##
## Perform the Interconnect Analysis ##


go clever

Init Layout="clex07.lay" Map="clex07.lmp" structure="clex07_0.str"

Save Spice="clex07.before.net"

Material Poly Conductivity=5e4
Material Aluminum Conductivity=1e6

Interconnect Adapt=(0.04,0.02) capsolver=1

Save Spice="clex07.net"

quit