Casey Molver

This article describes a model for Resonant Tunneling Diodes (RTDs) implemented within ATLAS framework. The model is based on a self-consistent solution of Poisson and Non-Equilibrium Green’s Function (NEGF) equations

Solar cells manufactured from wafers of crystalline or polycrystalline silicon are today the dominant technology in the commercial market. Solar cells based on thin film semiconductor are another technology with

The fully three-dimensional process simulator VICTORY PROCESS allows user to perform a wide range of manipulations of the structure’s geometry in order to obtain the device of the desired shape.

SOI MOSFETs can exhibit a kink in their Id/Vd curves, which is caused by impact ionization, floating potentials, and other effects. One way of suppressing this kink effect is to

Crosstalk is one of the main parameters that critically affect the resolution of detector arrays. It results in a reduction in image clarity, thus degrading system performance. There are two

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to

Texturing is often used to improve light trapping in thin film solar cells. The textured surfaces act to scatter the light in oblique angles lengthening the optical path and effectively

High Voltage Power Devices using super junction or multi RESURF effect have a relatively high BV with a drastic reduction in the on-state resistance (Ron)[1-2]. Several Techniques such as buried

Vertical LOCOS (VLOCOS) power MOSFET structures are becoming increasingly popular [1-3] for 100 V rated applications due to their high packing density, superior temperature characteristics and low on-state resistance. It

Solar cells are experiencing a surge in activity due to concerns about sustainability of non-renewable resources and the negative impacts of global warming due to human activity.

One of the most important features of TCAD simulation is that the TCAD tools encapsulate the physics of the processes or devices being studied. For the user, this can develop

The simulation of stress during device fabrication is becoming increasingly important and is often now deliberately introduced during fabrication to enhance device performance. The induced stress can take the form