Resistive RAM Switching Analysis with Victory TCAD Solution
Conventional non-volatile memory technologies, such as Flash, are near their physical limits of scalability. This has created demand for new storage devices. The concept of resistive switching has attracted increasing industrial interest. ReRAM technologies, such as OXRAM and CBRAM, have emerged as promising candidates due to their low power consumption, high endurance, and fast switching times. To improve the understanding of these devices, TCAD simulations can be used to study the chemical processes behind the resistive switching. They allow users to identify key factors controlling the switching behavior and can significantly shorten the development schedules. We will present a comprehensive and flexible ReRAM model, based on the Chemistry Module in Silvaco’s Victory Device simulator.
Presenter
Dr. Wolfgang Goes is a development engineer in Silvaco’s TCAD Division. Since joining Silvaco in 2016, he has worked primarily on Victory Device but also on Atlas and is responsible for trapping and reliability models.
Dr. Goes holds an MSc in Technical Physics and a PhD in Electrical Engineering, both from the TU Vienna. He continued working there as a post-doc at the Institute for Microelectronics focusing on reliability issues in microelectronic devices.
When: June 4, 2020
Where: Online
Time: 10:00am-10:30am-(PDT)
Language: English
WHO SHOULD ATTEND:
Engineers, management and academics, interested in i ReRAM storage technology.