September 3, 2026

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

1 month ago

Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration

Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration Abstract This article presents a practical simulation workflow for predictive simulation of normally-off p-GaN