7 years ago
Introduction Gallium nitride (GaN)-based devices are excellent candidates for high-voltage and high-power applications, due to the superior physical properties of GaN compared to Si, SiC, and GaAs. Recently, GaN vertical
Introduction Gallium nitride (GaN)-based devices are excellent candidates for high-voltage and high-power applications, due to the superior physical properties of GaN compared to Si, SiC, and GaAs. Recently, GaN vertical
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