Daily Archives: January 1, 2018
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January 1, 2018
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
9 years ago
Advanced Process and Device 3D TCAD Simulation of Split-Gate Trench UMOSFET
Lower conduction loss and fast switching characteristics for power devices are increasingly required in the more and more energy-conscious world. For the low to medium voltage ranges (12 V ~
9 years ago
Using TCAD to Reverse Engineer a 2N2222 BJT for Proton Damage Simulations
It is often the case, that an Engineer is required to simulate environmental effects on a device manufactured by a third party. In such an event, the first issue that
9 years ago
Optimization of PD-SOI CMOS Process and Devices for RF Applications
In recent years, radio-frequency (RF) CMOS on Silicon-on-Insulator (SOI) has rapidly evolved as a mainstream technology for switches used in wireless applications such as tuners and power amplifiers [1, 2].