Yearly Archives: 2014
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2014
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
13 years ago
Simulations of Deep-Level Transient Spectroscopy for 4H-SiC
Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices. Recently, SBD (Schottky Barrier Diode) and MOSFET based on silicon carbide have been
13 years ago
Generally Applicable Degradation Model for Silicon MOS Devices
The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface. This leads to reduced saturation currents and
13 years ago
Leakage Current TCAD Calibration in a-Si TFTs
Leakage Current TCAD Calibration in a-Si TFTs This webinar will outline in detail a calibration procedure used for amorphous silicon Thin-Film Transistors (a-Si TFTs) where TCAD simulations are compared to
13 years ago
TCAD to SPICE simulation of SiC and Si Power Devices
TCAD to SPICE Simulation of SiC and Si Power Devices – Archive This webinar will provide a discussion of the methods used to design, simulate and optimize the performance of
13 years ago
Modeling and Analysis of Single Event Effects
Modeling and Analysis of Single Event Effects – Archives This webinar will provide a discussion of the methods used by radiation effects engineers to model the impact of Single Event
13 years ago
Hints, Tips, and Solutions – Simulation on a Cluster of Computers Using the Distributed Computing Feature
A new feature that is introduced in Silvaco’s TCAD applications allows the user to run a parallel simulation on a cluster of computers within a network.
13 years ago
Hints, Tips and Solutions – Illuminate a 3D device in a Victory Device Opto-electronic Simulation
A: The 2 basic commands needed to illuminate a structure in Victory Device are BEAM and SOLVE. A single (or multiple) BEAM statement(s) are specified containing the light source properties.
13 years ago
Atlas Simulation of GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept
Wide-bandgap semiconductors such as SiC and GaN have attracted much attention because they are expected to break through the material limits of silicon. In particular, AlGaN/GaN HEMTs are generally promising
13 years ago
Modeling the Optical Response of Phonon-dressed Excitons in OLED Simulations
We demonstrate the modeling of optical response of exciton-polarons based on the well established Holstein Hamiltonian to model coupled exciton-phonon systems in organic molecular chains. Our approach uses Green’s functions