In 1975, screen printing was first applied to solar cells for the formation of the front and rear contacts replacing expensive vacuum metallization [1]. The encapsulate used in a photovoltaic

Single-photon counting detectors are used in a wide range of applications, including astronomy, optical communications, biological sensors, and military uses. Photomultiplier tubes (PMTs) have fulfilled these needs in the past.

In this paper, a two dimensional (2-D) generic model of quantum well light emitting diode (LED) based on ZnO, II-VI compound semiconductors has been reported. The structure has been designed

To break through the material limits of Silicon and to realize the drastic performance improvement needed to meet the severe requirements in the future, wide bandgap semiconductors such as SiC

The analysis and characterization of stress effects have become an integral part of semiconductor technology and device design. In a typical semiconductor process flow the stresses are generated primarily due