August 2002

The silicon germanium heterojunction bipolar transistor (SiGe HBT) is a promising technology for combining the operating speed of compound material devices with the production capability of bulk silicon. The presence

A new feature has been added to Silvaco's device simulator ATLAS, which allows the simulation of ohmic heating effects in metals using the Giga or Giga3D modules. The feature has

Impact ionization plays an important role in the design of many semiconductor devices. Since impact ionization is both temperature and electric field dependent, it is important to use a model

ATLAS may be used to study these effects. A standard experiment for studying recombination in silicon is the transient decay of photoexcited carriers - known as the Stephenson-Keyes method for