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August 1, 2000

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

26 years ago

Yield Analysis and Performance Optimization Using FastBlaze and SPAYN

In previous Simulation Standard articles (Nov 97 & Nov 98) FastBlaze has been presented as a new, highly efficient approach to simulating advanced HEMTs and MESFETs. Conventional device simulators often

26 years ago

New Model for Simulation of Exposure Process in Complex Nonplanar Resist-Substrate Structures

Predictive and efficient lithography simulation is an important component of the semiconductor industry efforts to develop the next generation of deep submicron technologies. Emerging technologies are based on elements with

26 years ago

Fast, Physical, Predictive and Calibrated Modeling of Ion Implantation

In a Research & Development environment, Technology Computer Aided Design (TCAD) is involved in the device optimization loop and requires efficient and predictive implantation modeling with frequent updating of the

26 years ago

Can Atlas be used to simulate advanced III-V or II-VI materials?

Yes. ATLAS now supports a wide range of materials in its database. This database covers single element conductors, binary compounds and quaternary compounds. A complete list of all materials can