27 years ago
This article will present an efficient and original methodology for global and predictive modeling of low energy Boron, BF2 and Arsenic ion implantation, in the suitable range for sub-100nm CMOS
This article will present an efficient and original methodology for global and predictive modeling of low energy Boron, BF2 and Arsenic ion implantation, in the suitable range for sub-100nm CMOS
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