Leakage Current Calibration Procedures of Amorphous Silicon Thin-Film Transistors
Introduction
Amorphous silicon Thin-Film Transistors (a-Si TFTs) are widely used as the switching device of liquid crystal display (LCD) technology. For development and analysis of a-Si TFTs, many research groups are trying to understand the physical mechanisms of a-Si TFTs. In particular, leakage current behavior is a major consideration for switching devices like a-Si TFTs. To analyze the leakage current mechanisms, calibration with numerical simulation is required.
In the next section, we describe a-Si TFT density of states (DOS) models and their implementation in ATLAS. Some examples of calibration procedures using them are also described.
