2020

7 years ago

The Simulation Standard, Silvaco’s technical journal for semiconductor process and device engineers is beginning its 30th year of publication. The latest issue has just been released and it outlines a

7 years ago

米国カリフォルニア州サンタクララ発 – 2020年3月30日 –Silvaco, Inc. (以下シルバコ)は、NXP® Semiconductorsとすでに開発で協業していますが、本日、この取り組みに基づき、新世代の半導体知的財産MIPI I3C IPを市場に投入したことを発表しました。

本ウェビナーでは、このギャップを埋めて、微視的な分子特性がデバイス性能に与える影響の解析を可能とする、微視的シミュレーションからTCADシミュレーションまでの自動インタフェース・フローをご紹介します。

7 years ago

Silvaco TCAD has been used by Tier 1 power device manufactures and designers for decades. The introduction of Victory Process, Victory Mesh, and Victory Device significantly increases the functionality and

7 years ago

The market for cellular components has been shifting rapidly from GaAs pHEMT or silicon-on-sapphire (SOS) to silicon-based technology. CMOS (silicon-on-insulator) SOI antenna switches which are compatible with multimode GSM/EDGE, TD/WCDMA,

7 years ago

It is crucial for any kind of calculations that units are consistent between equations and modeling modules. Often different units are used in various experimental and theoretical fields. Therefore, we

7 years ago

本ウェビナーでは、Utmost IV Quick-Start Optimization Templatesの新機能をご紹介します。

7 years ago

Victory Mesh initially supported loading and remeshing of the saved status from Victory Process. Victory Mesh 1.5.0 onwards is now able to load and remesh individual structure files (.str files),

Nanoscale Devices The full text for most of these papers may be found at the IEEE website at www.ieee.org. P. Blaise,1,2 “Ab Initio Simulation of Advanced Materials and Devices: Current

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Samy Almosni,[a,b] Ludmila Cojocaru,[a] Debin Li,[c] Satoshi Uchida,* [d] Takaya Kubo,[a] Hiroshi Segawa[a],[e],

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Yonghyun Shim, Member, IEEE, Jean-Pierre Raskin, Member, IEEE, César Roda Neve, Member, IEEE,

The full text for most of these papers may be found at the IEEE website at www.ieee.org. Daewoong Kang, Hyungcheol Shin, “Improving the cell characteristics using arch-active profile in NAND