Daily Archives: 2019年9月4日
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September 4, 2019
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
7 years ago
3D TCAD Simulation for Power Devices
y first IC design back in 1978 was a DRAM and it ran on 12V, 5V and -5V, but then my second DRAM was using only a 5V supply. Today
7 years ago
Optimization of Select Gate Transistor in Advanced 3D NAND Memory Cell
Abstract—There are several device challenges unique to the select gate transistor in 3D NAND memory cell. It requires low leakage current to prevent read and program disturb problems and it