Daily Archives: 2016年10月1日
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October 1, 2016
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
10 years ago
TCAD Simulation of Impact Ionization at Cryogenic Temperatures, down to 3 K
Some electronic devices operate at very low, cryogenic temperatures, sometimes as low as 4 K, which is the temperature of liquid helium. Such devices include infra-red (IR) photodetectors or single-photon
10 years ago
Stress Induced by Intrinsically Strained Silicon Nitride Passivation Films of AlGaN/GaN HEMTs Using Victory Process 2D
In the AlGaN/GaN HEMT fabrication process, silicon nitride (Si3N4) passivation of the HEMT surface layer, which is typically AlGaN, is commonly used to mitigate defect-related charge traps at the AlGaN
10 years ago
Victory Process 2D – A Valuable Alternative To SUPREM-based Simulators
SUPREM-IV – Stanford University PRocEss Modeling Program was first released 30 years ago. Since then its descendants - Athena from Silvaco and TSUPREM-4TM from TMA/Avant/Synopsys - have been 2D process