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October 1, 2009

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

17 years ago

3D SOI NMOSFET Simulation Using VICTORY DEVICE

SOI MOSFETs can exhibit a kink in their Id/Vd curves, which is caused by impact ionization, floating potentials, and other effects. One way of suppressing this kink effect is to

17 years ago

Crosstalk Simulation in InSb Detector Arrays

Crosstalk is one of the main parameters that critically affect the resolution of detector arrays. It results in a reduction in image clarity, thus degrading system performance. There are two

17 years ago

Simulating the Effects of Stress/Strain on a 50 nm Silicon FinFET

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to