Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device:

• 2D Simulator

The example shows:
How to charge the device using lucky electron gate current

How to obtain the threshold voltage for different charging times

The gate stack materials are changed to semiconductors and the necessary parameters are set. This example uses lucky electron injection model, LUCKY.INJECT, to allow injection of HEI current into the gate stack. The SONOS.HOT.EL flag enables charging of the Silicon Nitride layer by hot electrons, without enabling any tunneling injection.

The NITRIDECHARGE statement is used to specify electron traps at a uniform density of 5×10^19 /cm^3, and sets up various parameters for the capture cross-section and emission rates. The emission rates are in fact overridden because on the MODELS statement the PF.NITRIDE flag is specified. With this choice, the emission rates are calculated using the Poole-Frenkel formula. The HEI flag is also used to select a hot carrier gate current calculation using the lucky electron approximation along with the drift-diffusion simulation.

The gate bias is set to 6V and the drain is ramped to half of this. At the channel/insulator interface, the hot electron current is calculated and injected into the gate stack, from where it drifts into the Silicon Nitride layer. The Nitride is then charged according to the amount of hot carrier current injected into the conduction band.

The structure file is saved to file at certain preset simulation times so you can see the location of the Nitride charge at each output time.

Only a subset of structure files are output by the example, but you can also view the other ones if desired.

Images