Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Mesh

• 3D Meshing
• 3D Solid Modeling

Victory Device

• 3D Simulator
• 3D MRAM

This example shows the transient switching behavior of an MTJ structure upon application of a bias. The input deck consists of two parts that demonstrate how to:

Create and refine a mesh for the MTJ structure using Victory Mesh.

Perform a switching simulation and depict the simulation results using Victory Device.

In the first section, VICTORY MESH is started by go victorymesh . The following layers statement is used to generate a radially symmetric MTJ structure, which is extended by a contact region to the left and the right. Using the rotate statement, the obtained structure is rotated such that the main axis points into the direction of the x-axis. The remesh statement is used to generate a Delauney mesh for the device structure, which is then refined in all regions using the refine statement. It is noted that the created mesh is coarse in order to reduce the simulation time.

The switching simulation starts with go victorydevice simflags= “-mram ” . The simulation flag initiates the VICTORY MRAM Module, which is required for micromagnetic simulations. After loading the structure file, the parameters in the Landau-Lifshitz-Gilbert equations are specified for the magnetic layers (reference and free layer) on the llge statement. This set of parameters include the Gilbert damping factor, the saturation magnetization, the exchange constant, and the anisotropy energy.

The following sdde statement sets the parameter values required to set up the Spin-Drift-Diffusion equation. The resistance in the parallel and the anti-parallel configuration are given in the first line. The region-dependent parameters, such as electron diffusivity and the resistivity, and the interface parameters, such as the in-plane and out-of-plane polarization parameters, are specified in the following five and two lines, respectively.

The parallel orientation of the initial magnetization in the reference and the free layer is specified using the load statement.

Then, the logged quantities as well as the name of the log-file are defined on the probe and the log statement, respectively.

A transient simulation up to 7ns is performed to study the magnetic switching upon the application of a bias of 2V.

Finally, the time evolution of the magnetization in the free layer along with three snapshots of the magnetization in the x-direction during the simulation period are plotted. They demonstrate a successful magnetic switching from a parallel to an anti-parallel orientation in the x-direction.

Images