Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Device

• 2D Simulator

If a MOS transistor is operated under pinch-off condition, hot carriers traveling with saturation velocity can cause parasitic effects at the drain side of the channel known as Hot Carrier Effects (HCE). Hot carriers have sufficient energy to generate electron-hole pairs by impact ionization. The generated bulk minority carriers can either be collected by the drain or injected into the gate oxide. The generated majority carriers create a bulk current which can be used as a measurable quantity to determine the level of impact ionization.

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