Requires: CLEVER

This example demonstrates the analytical local oxidation model (LOCOS) included in CLEVER. Oxidation can be included in the process flow to more accurately model the geometry around the active device areas.

The user can choose the resolution of the “birds beak” formed during the LOCOS process by stipulating the Resolution parameter. The resolution can be set to Resolution=low , Resolution=medium or Resolution=high .

Once the process simulation is complete the three-dimensional structure is saved with the Save statement and can be plotted using TonyPlot3d. A two dimensional cross section of the structure is also plotted automatically, further demonstrating the Cut Line facility.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

Output Results

These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation
you should consider updating to a later version of the software.

Input Files

Input Deck

go victoryprocess

## For Speed of Execution, Here we do a 2D Simulation ##

Init  Layout=clex15.lay Depth=1 Material=Silicon Resolution=0.04 GasHeight=1 \
      flow.dim=2D_XZ from=0 to=10 at=5

cartesian mask=POLY spacing=0.08
cartesian mask=CONT spacing=0.02
cartesian mask=M1

line x location=3      spacing=0.01
line x location=5      spacing=0.2
line x location=7      spacing=0.01
line y location=3      spacing=0.01
line y location=5      spacing=0.2
line y location=7      spacing=0.01
line z location=0      spacing=0.005
line z location=-0.02  spacing=0.005
line z location=-0.1   spacing=0.01
line z location=-0.22  spacing=0.02

## Pad oxide ##

Deposit Material=Oxide Thickness=0.02 Max

## LOCOS ##

Deposit Material=Nitride Thickness=0.08 Max
Etch Material=Nitride Mask=LOCOS Max
# Oxidize Thickness=0.5
diffuse time=50 minutes temperature=1050 weto2

## Conductors ##

# Etch Material=Nitride Thickness=1 Min Mask=POLY reverse

Etch Material=Nitride thickness=0.2 Dry
Deposit Material=Polysilicon Thickness=0.2 Conformal Mask=POLY
Electrode Mask=POLY Material=Polysilicon

Deposit Material=Oxynitride thickness=0.08 conformal
Etch Material=Oxynitride thickness=0.08 Dry

# Etch Material=Nitride Thickness=1 Min Mask=CONT reverse
Etch Material=Oxide   Thickness=1 Min Mask=CONT reverse
Deposit Material=Aluminum Thickness=0.4 Conformal Mask=M1
Electrode Mask=M1 Material=Aluminum

Electrode Substrate

Save Name=clex15_0

## Create 3D Structure and 2D Cutline and Plot ##

go Victorymesh

load in=clex15_0
remesh conformal
save out=clex15_2D.str mode=Clever
Tonyplot clex15_2D.str

## Extract Capacitances

go clever

init Structure="clex15_2D.str"

material oxide       permittivity=3.9
material oxynitride  permittivity=6
material silicon     permittivity=11.8
material polysilicon conductivity=1000
material aluminum    conductivity=1e6

interconnect capacitance adaptC=0.01

Save Spice="caps.net"

quit