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Introduction With the MOSFET gate lengths scaling down to sub-20nms many kinds of devices have been proposed and researched such as double-gate, tri-gate, four-gate and gate-all-around (wire) MOSFETs.

Abstract The measured I-V curve from a ten period Si/SiGe MQW pin LED fabricated using a UHVCVD system is compared with ATLAS simulation results. A sizable silicon emission peak is

A conventional 2 layer organic light emitting diode consists of a Hole Ttransport Layer (HTL) and an electron transport layer (ETL). A good OLED structure requires sufficient carrier injection so

For various technological reasons, LEDs and as well as photo-voltaic devices frequently use PEDOT:PSS on top of ITO contacts as a hole injecting or hole collecting layer, respectively. However, due

Photolithography simulation is a very important part of TCAD. Accurate and predictive lithography simulation saves time and money spent on development and calibration of semiconductor technology processes.

A new 3D electromagnetic simulator coupled with a statistical analysis, for inductance loop optimization is presented. It allows RF designers to easily create inductor design by only specifying as inputs

How can I create a non planar structure using III-V materials for Device Analysis when the materials I want to use are not in the ATHENA data base.

Simulation capacities of GaInP solar cells were studied with a special emphasis on material and structural parameters. The comparison between experimental and numerical results allowed to validate the models used

Abstract: High-frequency simulations and characterizations of advanced metal-insulator-metal (MIM) capacitors with ultra thin 32 nm PECVD Si3N4 dielectric are presented. The frequency dependent behavior of capacitors is numerically and experimentally

How can I create a Design Of Experiments (DOE) using DeckBuild with one or more variables specified in a single input file when I only have a single license?

Introduction The application of microelectromechanical systems (MEMS) to radio-frequency (RF)/microwave systems is on the verge of revolutionizing wireless communications, mainly in the areas of wireless personal communication systems, wireless local

Introduction In modern power devices, the total power loss comprises both a conductive power loss component and a capacitive loss component. As the cell pitch decreases, the conductive loss will