Requires: CLEVER

This example is based upon an EXNOR custom cell layout and illustrates how CLEVER may be used to extract the full parasitic netlist from a complete cell.

Beginning from the process description, a 3-dimensional structure is created from which the resistance and capacitance are extracted using a field solver. The Adapt parameter on the Interconnect statement is used to specify the accuracy required by the field solver. The values of 0.1 and 0.05 require an accuracy of +/- 10% and 5% respectively.

Once the netlist is extracted it may be used in a SPICE input deck to anlayse the influence of cell parasitics on circuit performance. When this example is loaded support files that may be run in SmartSpice to show the circuit behaviour will also be loaded.

This example has been described within the CLEVER tutorial in the manual. For further information on this example please read the CLEVER tutorial chapter.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

Output Results

These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation
you should consider updating to a later version of the software.

Input Files

Input Deck

go VictoryProcess

## Process Description ##

Init Layout=clex06.lay Depth=1 Material=Silicon RuleFile=clex06.lmp

## gate oxide ##

Deposit Material=Oxide Thickness=0.3 Max

## Polysilicon ##

Deposit Material=Polysilicon Thickness=0.25 Max
Etch    Material=Polysilicon Mask=POLY
Electrodes Mask=*GATE Material=Polysilicon

## Contact Holes ##

Deposit Material=Oxide Thickness=0.5 Max
Etch Material=Oxide Mask=CONT Reverse
Electrodes Mask=*CONT Material=Silicon

## metal1 ##

Deposit Material=Aluminum Thickness=0.5 Max
Etch Material=Aluminum Mask=METAL1
Electrodes Mask=METAL1 Material=Aluminum

## via1 ##

Deposit Material=Oxide Thickness=0.5 Max
Etch    Material=Oxide Mask=VIA1 Reverse

## metal2 ##

Deposit Material=Aluminum Thickness=0.5 Max
Etch    Material=Aluminum Mask=METAL2
Electrodes Mask=METAL2 Material=Aluminum

Deposit Material=Oxide Thickness=1 Max

Save Name=clex06_1

## After creating the 3D structure   ##
## Perform the Interconnect Analysis ##

go clever

Init Structure="clex06_1.str" Layout="clex06.lay" map="clex06.lmp"

Save Spice="clex06.before.net"

Material Poly Conductivity=5e4
Material Aluminum Conductivity=1e6

Interconnect Adapt=(0.04, 0.02) capsolver=1

Save Spice="clex06.net" 

quit