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VP_Oxidation_ex03.in : Doping dependent oxidation

VP_Oxidation_ex03.in : Doping dependent oxidation

VP_Oxidation_ex03.in : Doping dependent oxidation

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Oxidation
  • 2D Diffusion +ACY- Implantation

The example demonstrates the variation of rate of oxide growth due to dopant concentration in the substrate. Here, the substrate (n-type silicon) contains a n+-type well doped on one side and the entire surface is then subjected to thermal oxidation. The example shows thicker oxide over the region with higher phosphorus concentration than over the region with low phosphorus concentration. The thickness of the left and right hand edges are automatically extracted to enable easy value comparison.

Images

VP_Oxidation_ex03_01.png

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