Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Oxidation
- 2D Diffusion & Implantation
The example demonstrates the effect of crystal orientation on growth rate of oxide on trench sidewalls. The orientation of the substrate (silicon) is set by “orientation ” parameter in the init statement. This example uses <100> substrate. Substrate rotation of 0 deg and 45 deg are demonstrated. These values are set using the “sub.rot ” parameter in the init statements.
The substrate initialized for each rotation is etched on right side to create a trench which is 2 um deep. It is then subjected to a diffusion in wet oxide ambiance at 1000 deg C for 20 min to enable oxide growth over the exposed surface. The oxide thickness along the trench side wall and trench base is extracted.
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