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VP_Implant_ex06.in : Implantation into SiC at Elevated temperatures

VP_Implant_ex06.in : Implantation into SiC at Elevated temperatures

VP_Implant_ex06.in : Implantation into SiC at Elevated temperatures

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation

The example compares MC implant at elevated temperatures in SiC.

The example demonstrates Monte-Carlo implantation in SiC-4H substrate at elevated temperatures. Aluminum is implanted at 100keV with a dose of 1.9e13/cm2 at temperatures 27, 200, 400, & 600 deg C. The final Aluminum prfile is extracted from the structure and plotted together for comparison.

Images

VP_Implant_ex06_01.png

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