Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Extract

Junction depth from the surface of the semiconductor is often a key design parameter. The following example demonstrates how to extract it from a structure.

Specifying x.val gives the location on the x axis at which the junction should be extracted (specifying z.val would enable the extraction of the lateral junction). The junction is located when “Net Doping ” is equal to “0 “, the junction is being extracted from Silicon only and the value is the distance from the edge of the material.

It is often useful to extract 1D profiles of doping (or electrical quantities on biased structures such as electron concentration or electric field etc) for comparison against measurements. th next part shows how to extract the “Active Phosphorus ” 1D profile in Silicon at x=0.8 and saves to a csv file.

Finally a 2D map of doping (Arsenic) is extracted across all regions (regions=*) and saved to file. the data points are regularly spaced at 0.01 in the x and 0.01 in the z.

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